美光科技取得选择栅极栅极诱导漏极泄漏增强专利

Core Viewpoint - Micron Technology has been granted a patent for "Selection Gate Induced Drain Leakage Enhancement," which may enhance its technological capabilities in the semiconductor industry [1] Group 1 - The patent was officially announced under the publication number CN115019845B [1] - The application date for the patent was March 2022 [1]