New Vishay Intertechnology 890 nm IR Emitting Diode Offers High Typical Radiant Intensity of 235 mW/sr and Fast Switching Times of 15 ns
Vishay Intertechnology(VSH) Newsfilter·2024-07-17 15:00MALVERN, Pa., July 17, 2024 (GLOBE NEWSWIRE) -- Vishay Intertechnology, Inc. (NYSE: VSH) is broadening its optoelectronics portfolio with the introduction of a new 890 nm high speed infrared (IR) emitting diode in a clear, untinted leaded plastic package. Based on surface emitter technology, the Vishay Semiconductors TSHF5211 combines an excellent -1.0 mV/K temperature coefficient of VF with higher radiant intensity and faster rise and fall times than previous-generation devices. RoHS-compliant, halogen-fre ...