Vishay Intertechnology 150 V MOSFET Increases Efficiency With the Industry's Lowest RDS(ON) of 5.6 mΩ and RDS(ON)*Qg FOM of 336 mΩ*nC

MALVERN, Pa., Nov. 20, 2024 (GLOBE NEWSWIRE) -- To provide higher efficiency and power density for telecom, industrial, and computing applications, Vishay Intertechnology, Inc. (NYSE: VSH) today introduced a new 150 V TrenchFET® Gen V n-channel power MOSFET in the PowerPAK® SO-8S (QFN 6x5) package. Compared to previous-generation devices in the PowerPAK SO-8, the Vishay Siliconix SiRS5700DP slashes overall on-resistance by 68.3% and on-resistance times gate charge — a key figure of merit (FOM) for MOSFETs u ...