Vishay Intertechnology 40 V MOSFET in PowerPAK® 10x12 Package Offers Best in Class RDS(ON) of 0.34 mΩ to Increase Efficiency

Space-Saving Device Features BWL Design and High ID to 795 A to Increase Power Density, While Low RthJC of 0.21 °C/W Improves Thermal Performance MALVERN, Pa., Dec. 04, 2024 (GLOBE NEWSWIRE) -- To provide higher efficiency and power density for industrial applications, Vishay Intertechnology, Inc. (NYSE: VSH) today introduced a new 40 V TrenchFET® Gen V n-channel power MOSFET in the PowerPAK® 10x12 package with best in class on-resistance. Compared to competing devices in the same footprint, the Vishay Sili ...