Lam Research Establishes 28nm Pitch in High-Resolution Patterning Through Dry Photoresist Technology

Core Insights - Lam Research Corporation has qualified its innovative dry photoresist technology for direct-print 28nm pitch back end of line (BEOL) logic at 2nm and below, as confirmed by imec, a leading research hub in nanoelectronics [1][3] - The dry resist technology enhances resolution, productivity, and yield in extreme ultraviolet (EUV) lithography, which is crucial for next-generation semiconductor devices [1][4] Company Overview - Lam Research is a global supplier of wafer fabrication equipment and services to the semiconductor industry, with a strong commitment to technology leadership and customer service [6] - The company is headquartered in Fremont, California, and is a FORTUNE 500® company [6] Technology Benefits - The dry photoresist technology offers low-defectivity and high-resolution patterning, which is essential as chipmakers transition to advanced technology nodes with smaller transistor features [2][3] - This technology optimizes patterning by addressing the tradeoff between EUV exposure dose and defectivity, thus improving manufacturing efficiency [3][4] - Lam's dry resist processes are compatible with both low NA and high NA EUV scanners, enhancing EUV sensitivity and wafer pass resolution [4] Sustainability Aspects - The dry resist technology is noted for its sustainability benefits, consuming less energy and five to ten times fewer raw materials compared to traditional wet chemical resist processes [4]