Lam Research Establishes 28nm Pitch in High-Resolution Patterning Through Dry Photoresist Technology

FREMONT, Calif., Jan. 14, 2025 /PRNewswire/ -- Lam Research Corporation (Nasdaq: LRCX) today announced that its innovative dry photoresist (dry resist) technology has been qualified for direct-print 28nm pitch back end of line (BEOL) logic at 2nm and below by imec, a leading research and innovation hub in nanoelectronics and digital technologies. An advanced patterning technique introduced by Lam, dry resist enhances the resolution, productivity and yield of extreme ultraviolet (EUV) lithography, a pivotal ...