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Lam Research Ushers in New Era of Semiconductor Metallization with ALTUS® Halo for Molybdenum Atomic Layer Deposition
LRCXLam Research(LRCX) Prnewswire·2025-02-19 14:00

Core Insights - Lam Research Corp. has introduced ALTUS® Halo, the first atomic layer deposition (ALD) tool utilizing molybdenum for advanced semiconductor production, marking a significant advancement in semiconductor metallization technology [1][2][4] - ALTUS Halo is designed to address the scaling challenges faced by chipmakers, enabling the production of next-generation memory and logic chips essential for AI, cloud computing, and smart devices [1][3][4] Group 1: Product Features and Innovations - ALTUS Halo offers high-precision deposition of low resistivity, void-free molybdenum metallization, which is crucial for the performance of leading-edge semiconductor devices [1][6] - The tool is optimized for various metallization needs, allowing for conformal or selective deposition with bottom-up feature fill, enhancing manufacturing efficiency [7] - Compared to conventional tungsten metallization, ALTUS Halo provides over 50% improvement in resistance, making it a superior choice for next-generation applications [6] Group 2: Industry Impact and Adoption - The introduction of molybdenum metallization is seen as a pivotal shift in the semiconductor industry, moving away from tungsten to meet the increasing performance demands of advanced applications [3][5] - Early adoption of ALTUS Halo has commenced with leading 3D NAND manufacturers in Korea and Singapore, indicating strong market interest and potential for widespread implementation [8] - Micron has highlighted the integration of molybdenum metallization through ALTUS Halo as a key factor in achieving industry-leading I/O bandwidth and storage capacity in their latest NAND products [8]