Navitas Drives a Paradigm Shift in Power with Single-Stage Bi-Directional Switch (BDS) Converters

Core Insights - Navitas Semiconductor has launched the world's first production-released 650 V bi-directional GaNFast ICs and high-speed isolated gate-drivers, marking a significant advancement in power semiconductor technology [1][4][8] - The new bi-directional GaNFast ICs enable a shift from traditional two-stage power converters to single-stage BDS converters, which can lead to substantial cost and size reductions in various applications [2][3][5] Company Overview - Navitas Semiconductor is a pure-play, next-generation power semiconductor company, specializing in gallium nitride (GaN) and silicon carbide (SiC) technologies [1][11] - The company has been operational for 10 years and holds over 300 patents, with a focus on markets such as AI data centers, electric vehicles (EV), solar energy, and energy storage [11] Product Details - The initial bi-directional GaNFast ICs include models NV6427 and NV6428, featuring low on-resistance values of 100 mΩ and 50 mΩ respectively, and are available in thermally enhanced packaging [6] - The IsoFast devices are designed to drive bi-directional GaN with significantly improved transient immunity and no need for external negative bias supply [7] Market Impact - The transition to single-stage BDS converters is expected to open multi-billion dollar market opportunities in EV charging, solar inverters, energy storage, and motor drives [1][3][8] - Implementing GaNFast-enabled single-stage converters can result in up to 10% cost savings, 20% energy savings, and up to 50% size reductions [3] Future Developments - Navitas plans to extend its product family with lower on-resistance offerings in the future [6] - The company will showcase its new products at the APEC 2025 power electronics conference [10]