英诺赛科：发布1200V氮化镓产品

Core Viewpoint - The company has announced the launch of its self-developed 1200V Gallium Nitride (GaN) product, which offers significant advantages in high-voltage and high-frequency applications due to its wide bandgap characteristics and zero reverse recovery charge [1] Group 1: Product Features - The 1200V GaN product enhances energy conversion system efficiency and miniaturization [1] - It is validated by customers and has achieved mass production in medium to high power supply applications [1] Group 2: Application Areas - The product is expected to be widely used in electric vehicles, industrial applications, and AI data centers [1] - Future applications will focus on the automotive and AI data center sectors [1]