Navitas Redefines Reliability with Industry’s First Automotive ‘AEC-Plus’ Qualified SiC MOSFETs in HV-T2Pak Top-Side Cooled Package

Core Insights - Navitas Semiconductor introduces a new level of reliability in power semiconductor technology, specifically targeting automotive and industrial applications with its latest generation of SiC MOSFETs [1][3][4] Group 1: Product Features - The new HV-T2Pak SiC MOSFETs provide significant improvements in system-level power density and efficiency, enhancing thermal management and simplifying design and manufacturability [2] - The SiC MOSFETs feature an industry-leading creepage distance of 6.45 mm, meeting IEC compliance for applications up to 1200V [1][4] - The initial portfolio includes 1200 V SiC MOSFETs with on-resistance ratings from 18 mΩ to 135 mΩ and 650 V SiC MOSFETs with ratings from 20 mΩ to 55 mΩ, with plans to release lower on-resistance options later in 2025 [8] Group 2: Qualification Standards - Navitas has established an 'AEC-Plus' qualification standard, exceeding the existing AEC-Q101 and JEDEC standards, demonstrating a commitment to high reliability in automotive and industrial applications [3][4] - The 'AEC-Plus' standards include rigorous multi-lot testing and additional requirements for thermal management and reliability [4][11] Group 3: Technological Advancements - The GeneSiC™ technology offers up to 20% lower on-resistance at high temperatures compared to competitors, resulting in lower power losses across a wider operating range [7] - The exposed thermal pad in the HV-T2Pak package features nickel plating, enhancing thermal efficiency and reliability compared to traditional tin plating [5]