通威微电子申请沟槽 MOSFET 器件及其制作方法专利，大幅降低栅氧失效概率

Group 1 - The core viewpoint of the news is that Tongwei Microelectronics Co., Ltd. has applied for a patent related to a trench MOSFET device and its manufacturing method, which aims to enhance the reliability and robustness of semiconductor devices [1] Group 2 - Tongwei Microelectronics Co., Ltd. was established in 2021 and is located in Chengdu, primarily engaged in the manufacturing of computers, communications, and other electronic devices [2] - The company has a registered capital of 850 million RMB and has participated in 14 bidding projects, holds 287 patent information, and possesses 12 administrative licenses [2]