Core Viewpoint - Vishay Intertechnology, Inc. has introduced a new 80 V TrenchFET Gen IV n-channel power MOSFET, the SiEH4800EW, which offers superior thermal performance and efficiency for industrial applications [1][2]. Product Features - The SiEH4800EW features an on-resistance of 0.88 mΩ at 10 V, minimizing power losses and enhancing efficiency with a maximum RthJC of 0.36 °C/W [2]. - The device has a compact footprint of 8 mm by 8 mm, occupying 50% less PCB space compared to traditional MOSFETs in the TO-263 package, and has an ultra-low profile of 1 mm [2]. - A fused lead design increases the source PAD solderable area to 3.35 mm², which is four times larger than traditional PIN solder areas, reducing current density and enhancing robustness [3]. Applications - The MOSFET is suitable for synchronous rectification and OR-ing functionality, with applications including motor drive controls, power tools, welding equipment, plasma cutting machines, battery management systems, robotics, and 3D printers [4]. - It operates at high temperatures up to +175 °C and features a design that minimizes parasitic inductance while maximizing current capability [4]. Compliance and Testing - The device is RoHS-compliant and halogen-free, and it has undergone 100% Rg and UIS testing [4]. Availability - Samples and production quantities of the SiEH4800EW are currently available, with lead times of 13 weeks [7]. Company Overview - Vishay Intertechnology is a major manufacturer of discrete semiconductors and passive electronic components, serving various markets including automotive, industrial, computing, consumer, telecommunications, military, aerospace, and medical [8].
Vishay Intertechnology 80 V MOSFET in PowerPAK® 8x8SW Package Offers Best in Class RDS(ON) of 0.88 mΩ to Increase Efficiency