Group 1 - The company has reached a cooperation intention with Suzhou Bozhi Jinduan Technology Co., Ltd. to establish a joint venture named Henan Qianyuan Xinduan Semiconductor Technology Co., Ltd. to develop and industrialize new generation ultra-high performance diamond-based thermal materials and devices [1][3] - The registered capital of the joint venture is set at 10 million yuan, with the company contributing 5.1 million yuan (51% stake) and Bozhi Jinduan contributing 4.9 million yuan (49% stake) [2][4] - The joint venture aims to address challenges in the preparation of large-size diamond materials and the production of diamond-based packaging devices, significantly enhancing the thermal and electrical performance of packaging devices [3][5] Group 2 - The joint venture will focus on the research and development of diamond-based thermal materials and devices, which are expected to lead the international development direction of ultra-high power thermal materials and devices [3][4] - The board of the joint venture will consist of three members, with two nominated by the company and one by Bozhi Jinduan, and the chairman will be appointed from the company's nominees [4] - The establishment of the joint venture has been approved by the company's board of directors and does not require further approval from the shareholders' meeting [5]
黄河旋风: 关于设立合资公司的公告