中科院上海微系统所：双向高导热石墨膜研究获突破 为5G芯片、功率半导体热管理提供技术支撑

Core Viewpoint - A research team from the Shanghai Institute of Microsystem and Information Technology and Ningbo University has developed a bidirectional high thermal conductivity graphite film using aramid film as a precursor, achieving significant improvements in thermal conductivity compared to traditional thermal films [1] Group 1: Research Findings - The bidirectional high thermal conductivity graphite film achieved an in-plane thermal conductivity (Kin) of 1754 W/m.K and an out-of-plane thermal conductivity (Kout) exceeding 14.2 W/m.K with a thickness of 40 micrometers [1] - The new film demonstrates significant advantages in both in-plane and out-of-plane thermal conductivity and defect control compared to conventional thermal films [1] Group 2: Application and Impact - In thermal simulations for smartphones, the surface temperature of chips using the bidirectional high thermal conductivity graphite film decreased from 52°C to 45°C [1] - For high-power chip cooling at a heat flux density of 2000 W/cm, the temperature difference on the chip surface was reduced from 50°C to 9°C, enabling rapid temperature uniformity [1] Group 3: Material and Technology Implications - The research highlights the unique advantages of aramid precursors in the preparation of graphite films, demonstrating that nitrogen doping and low oxygen content precursors can enhance the crystallization quality and bidirectional thermal properties of graphite films [1] - The breakthrough in bidirectional thermal conductivity is expected to provide critical materials and technical support for thermal management in high-power devices such as 5G chips and power semiconductors [1]