Core Insights - Silvaco Group, Inc. has announced a strategic R&D collaboration with Fraunhofer Institute for Silicon Technology (ISIT) to accelerate the development of next-generation Gallium Nitride (GaN) devices using Silvaco's Power Devices Solution for Design Technology Co-Optimization (DTCO) [1][3] Company Overview - Silvaco is a provider of TCAD, EDA software, and SIP solutions that facilitate semiconductor design and digital twin modeling through AI software and innovation [4] - The company serves various markets including display, power devices, automotive, memory, high-performance computing, foundries, photonics, IoT, and 5G/6G mobile markets for complex SoC design [4] - Silvaco is headquartered in Santa Clara, California, with a global presence across North America, Europe, Brazil, China, Japan, Korea, Singapore, and Taiwan [4] Collaboration Details - The partnership will utilize Silvaco's design tools such as Victory TCAD™, Utmost IV™, and SmartSpice™ for DTCO in power and sensor device development [2] - The collaboration aims to enhance Fraunhofer ISIT's capabilities in developing high-performance power electronic and sensor systems, particularly in the post-CMOS process environment [2][5] - Silvaco's Victory Design of Experiments™ (DOE) solution will streamline development workflows and support rapid innovation in evaluating novel process modules and emerging device concepts [2] Industry Impact - This collaboration is seen as a significant advancement in strengthening Europe's semiconductor capabilities and advancing the global evolution of GaN devices [3] - The partnership will not only accelerate development efforts at Fraunhofer ISIT but also enhance Silvaco's TCAD tools to meet future device design demands [3] - Fraunhofer ISIT will also train students at local universities on Silvaco's Victory TCAD™ platform, preparing the next generation of semiconductor device engineers [3]
Silvaco and Fraunhofer ISIT Collaborate to Advance Next-Generation GaN Device Technology using Silvaco's DTCO Flow