ROHM Develops an Ultra-Compact MOSFET Featuring Industry-Leading* Low ON-Resistance Ideal for Fast Charging Applications

Core Insights - ROHM Semiconductor has developed the AW2K21, a 30V N-channel MOSFET with an industry-leading ON-resistance of 2.0mΩ in a compact 2.0mm × 2.0mm package [1][11]. Product Development - The AW2K21 addresses the growing demand for fast charging in compact devices, which require bidirectional protection to prevent reverse current flow [2]. - The new MOSFET integrates two devices into a single package, optimizing space and complexity in power supply and charging circuits [3]. Technical Specifications - The AW2K21 features a proprietary structure that enhances cell density and minimizes ON-resistance per unit chip area, achieving a maximum current rating of 20A and breakdown voltage between 28V and 30V [2][4]. - Compared to standard solutions that require two 3.3mm × 3.3mm MOSFETs, the AW2K21 reduces footprint and ON-resistance by approximately 81% and 33%, respectively [5]. Competitive Advantage - The AW2K21's design allows for a larger chip-to-package area ratio, further reducing ON-resistance per unit area, making it suitable for high-power fast charging applications [4]. - It maintains the lowest ON-resistance in the industry for unidirectional protection MOSFETs in load switch applications [8]. Future Developments - ROHM is committed to further miniaturization and energy efficiency, with plans to develop an even smaller 1.2mm × 1.2mm model [8][9]. - The AW2K21 is set to launch in April 2025 and will be available through online distributors such as DigiKey™, Mouser™, and Farnell™ [9].