Core Viewpoint - Vishay Intertechnology has introduced three new Gen 3 silicon carbide Schottky diodes designed for high voltage applications, featuring a compact SlimSMA HV package that enhances efficiency in power designs [1][2]. Group 1: Product Features - The new diodes include the 1 A VS-3C01EJ12-M3 and the 2 A VS-3C02EJ07-M3 and VS-3C02EJ12-M3, which offer low capacitive charge and a minimum creepage distance of 3.2 mm [1][2]. - These devices maintain a low capacitive charge down to 7.2 nC regardless of temperature, resulting in faster switching speeds and reduced power losses [3]. - The MPS structure of the diodes allows for a reduced forward voltage drop down to 1.30 V, contributing to improved efficiency [3]. Group 2: Applications - Typical applications for these diodes include bootstrap, anti-parallel, and PFC diodes for DC/DC and AC/DC converters in server power supplies, energy generation and storage systems, industrial drives and tools, and X-ray generators [4]. - The devices are designed to operate at high temperatures of up to +175 °C, making them suitable for demanding environments [4]. Group 3: Compliance and Availability - The diodes are RoHS-compliant and halogen-free, with a Moisture Sensitivity Level of 1 according to J-STD-020 [5]. - Samples and production quantities of the new SiC diodes are currently available, with lead times of 14 weeks [8]. Group 4: Company Overview - Vishay Intertechnology is recognized as one of the largest manufacturers of discrete semiconductors and passive electronic components, serving various markets including automotive, industrial, computing, and medical [9].
Vishay Intertechnology Gen 3 650 V and 1200 V SiC Schottky Diodes Increase Efficiency While Enhancing Electrical Insulation