科学家实现最强声子干涉效应 有望推动分子级传感、量子计算等前沿领域应用

Group 1 - A recent study led by a team from Rice University has achieved the strongest phonon interference effect in silicon carbide systems to date, known as "Fano resonance," with an intensity two orders of magnitude higher than previously reported [1] - This phonon-based technology is expected to advance molecular-level sensing technology and open new application pathways in energy harvesting, thermal management, and quantum computing [1] - The breakthrough relies on constructing a two-dimensional metallic interface on a silicon carbide substrate, significantly enhancing the interference effect of different vibration modes within silicon carbide [1] Group 2 - The interference sensitivity is high enough to detect single molecules without the need for chemical labels, and the device is simple and scalable, promising applications in quantum sensing and next-generation molecular detection [2] - In low-temperature experiments, the team confirmed that this effect is entirely due to phonon interactions rather than electronic effects, making this "pure phonon" quantum interference rare and specific to the two-dimensional metal/silicon carbide system [2]