半导体材料 重大突破

Core Viewpoint - The domestic semiconductor industry has achieved a significant breakthrough in the preparation of large-size Indium Phosphide (InP) materials, with the successful development of 6-inch InP-based PIN structure detectors and FP structure lasers, reaching internationally leading performance levels [1][2]. Group 1: Industry Developments - The breakthrough in 6-inch InP technology addresses the long-standing technical bottleneck in the industrial application of InP materials, which has been limited to 3-inch processes, resulting in high costs that do not meet the explosive growth in downstream applications [1]. - The global optoelectronics industry is experiencing rapid growth, with a predicted market size for InP optoelectronics reaching $5.6 billion by 2027, reflecting a compound annual growth rate (CAGR) of 14% [1]. - The successful development of 6-inch InP technology is expected to reduce the cost of domestic optical chips to 60%-70% of the 3-inch process, enhancing the competitiveness of domestic optical chips in the market [1]. Group 2: Collaborative Efforts and Future Prospects - The breakthrough achieved by the Jiufengshan Laboratory is a result of collaboration with domestic supply chains, which is crucial for promoting the coordinated development of China's compound semiconductor industry and establishing a foundation for self-sufficiency in the industry chain [2]. - The collaboration with Yunnan Xinyao has led to key technological breakthroughs in the industrialization of 6-inch high-quality InP single crystals, with mass production imminent [2]. - The establishment of the world's first 6-inch InP wafer production facility by Coherent in the U.S. in March 2024 is expected to significantly lower the costs of InP optoelectronic devices, further influencing the global market [2].