Axcelis Announces Joint Development Program with GE Aerospace For the Development of High Voltage Superjunction Power Devices

Core Insights - Axcelis Technologies, Inc. has announced a Joint Development Program (JDP) with GE Aerospace to develop production-worthy 6.5 to 10kV superjunction power devices [1][2] - The JDP is part of the 'Advanced High Voltage Silicon Carbide Switches' project under the Commercial Leap Ahead for Wide Bandgap Semiconductors (CLAWS) Hub, led by North Carolina State University [2] - Silicon Carbide (SiC) wide bandgap semiconductors are crucial for aerospace and defense applications, offering higher voltages, operating temperatures, and frequencies compared to traditional Silicon devices [3] Company Overview - Axcelis has been providing innovative, high-productivity solutions for the semiconductor industry for over 45 years, focusing on ion implantation systems [7] - The Purion XEmax™ high energy implanter from Axcelis is noted for its high beam currents and broad energy range, optimizing the profile in depth and concentration [4] Industry Context - GE Aerospace has a leading IP portfolio in SiC technologies and is focusing on SiC developments for extreme operating environments, including hypersonic travel and electric propulsion [5][6] - High voltage SiC power devices are essential for emerging applications such as artificial intelligence, quantum computing, and autonomous vehicles [3][6]