Core Viewpoint - Chinese storage manufacturers are set to fully adopt domestic EDA tools, marking a significant step towards industry self-sufficiency in the design phase [1][2] Group 1: Domestic EDA Tools - Chinese manufacturers have introduced self-developed domestic EDA tools in large-scale production of Flash and DRAM, filling a critical gap in the industry's self-sufficiency [1][2] - Domestic companies have developed a complete EDA system that supports the design platform for DRAM and NAND Flash production [2] - This move is expected to gradually establish a supply chain of chip manufacturing combined with local EDA tools, reducing reliance on international EDA providers [2] Group 2: Huawei's UCM Technology - Huawei has launched the Unified Cache Manager (UCM), which reportedly reduces the generation delay of the First Token by 90%, expands the model context memory range by 10 times, and increases overall throughput by up to 22 times [3] - UCM aims to enhance the efficiency of existing hardware rather than replace it, optimizing data storage based on usage frequency [3] - This innovation compensates for hardware limitations in domestic AI, maximizing the performance of limited HBM resources [3] Group 3: Rise of Domestic Storage Manufacturers - The rise of Changxin Memory and Yangtze Memory has a profound impact on the domestic storage industry and the entire semiconductor sector [4] - Their success serves as a model for other domestic storage companies, driving technological upgrades and development across the industry [4] - The growth of domestic storage firms enhances China's position in the global semiconductor supply chain, reducing dependence on imported storage chips and ensuring national information security [4] Group 4: Production Capacity and Technological Advancements - Changxin Memory is expected to increase its production capacity by nearly 50% this year, building on last year's significant growth [5] - By the end of this year, Changxin's market share by bit shipment is projected to rise from 6% in Q1 to 8% [5] - Yangtze Memory has successfully achieved mass production of 294-layer 3D NAND and is advancing towards 300-layer NAND development, closely approaching Samsung's technology [5] - Changxin has successfully mass-produced domestic DDR5 modules and plans to produce HBM3 memory by the end of 2025 to 2026, entering the high-bandwidth memory market [5]
存储厂国产化程度进一步提升,华为UCM提升先进存储使用效率 | 投研报告
Zhong Guo Neng Yuan Wang·2025-08-21 09:19