Group 1 - Tianyue Advanced has reached a basic agreement with Toshiba Electronic Components and Storage Devices Corporation to collaborate on the development and manufacturing of SiC power semiconductor substrates, focusing on technical cooperation for enhancing SiC power semiconductor characteristics and quality improvement [1][2] - The demand for power semiconductors, essential for energy efficiency and carbon neutrality in electrical devices, is expected to continue expanding, particularly for SiC substrates used in electric vehicles and renewable energy systems [3] - Toshiba is accelerating the development of SiC devices for server power supplies and automotive applications, aiming to reduce power loss and enhance reliability and efficiency in high-efficiency power conversion applications [3][4] Group 2 - Tianyue Advanced, founded in 2010, specializes in the development and production of single-crystal SiC substrates, holding a top-five position globally in related patents [4] - The company plans to launch the world's first 12-inch SiC substrate in 2024 and aims to achieve a full range of n-type, semi-insulating, and p-type 12-inch substrates by 2025 [4] - The collaboration with Toshiba is expected to enhance substrate quality and reliability, supporting the growth of the SiC power semiconductor market [4]