ACLS, GE Partner to Advance High Voltage Silicon Carbide Power Devices

Core Insights - Axcelis Technologies Inc. has initiated a Joint Development Program with GE Aerospace to develop production-worthy 6.5 to 10kV superjunction power devices, emphasizing the significance of Silicon Carbide (SiC) in advanced power electronics for various industries [1][11] - The collaboration is part of the Commercial Leap Ahead for Wide Bandgap Semiconductors (CLAWS) Hub, led by North Carolina State University [5] Company Developments - Axcelis' Purion XEmax high-energy implanter is noted for its high beam currents and broad energy range, enabling the development of SiC devices that can endure extreme conditions [3][11] - Customer Solutions & Innovation (CS&I) contributed approximately 30% to total revenues in the first half of 2025, indicating a focus on enhancing customer experience and value [6][7][11] - The company is actively engaging with customers on technology roadmaps, particularly in advanced logic and SiC applications, and is investing in R&D for new technologies [8] Industry Context - SiC wide bandgap semiconductors are positioned to outperform traditional Silicon devices in terms of voltage, temperature, and frequency, making them crucial for aerospace, defense, and emerging technologies like AI and autonomous vehicles [2] - GE Aerospace has a robust IP portfolio in SiC technologies, focusing on applications in extreme environments such as hypersonic flight and electric propulsion [4]