GlobalFoundries Announces Production Release of 130CBIC SiGe Platform for High-Performance Smart Mobile, Communication and Industrial Applications

Core Insights - GlobalFoundries (GF) has announced the production release of its 130nm complementary Bi-CMOS (CBIC) platform, marking its highest-performance silicon germanium (SiGe) technology to date [1][2] Group 1: Technology and Performance - The 130CBIC platform features NPN transistors exceeding 400 GHz ft/fmax and PNP transistors surpassing 200 GHz, making it the only high-performance SiGe platform suitable for key markets such as smartphones, wireless infrastructure, optical networking, satellite communications, and industrial IoT [2][3] - This technology is optimized for RF performance in connected applications while reducing costs, enabling low-noise amplifiers (LNAs) for cellular smartphones that decrease current consumption and battery drain [3][4] Group 2: Market Applications - The platform supports high-performance PNP transistors that facilitate innovative amplifier topologies, delivering high gain-bandwidth at lower power for high-speed analog and optical networking [3] - It also enables advanced mmWave industrial radar applications exceeding 100GHz, which provide high-resolution sensing and distance ranging in a compact form factor [3] Group 3: Strategic Importance - The introduction of 130CBIC is seen as a significant milestone in GF's SiGe roadmap, establishing a new benchmark for performance in high-growth markets that depend on advanced RF technologies for energy-efficient connectivity [4] - The platform is available for prototyping through GF's GlobalShuttle multi-project wafer program, with shuttles scheduled through 2025 and 2026, and RF reference designs are accessible via GF's self-service GF Connect portal [4]