国盛证券：重视HBM、3D DRAM、定制化存储机遇 中国厂商有望实现弯道超车

Group 1 - HBM (High Bandwidth Memory) has become the main driver for growth in the DRAM market, addressing bandwidth bottlenecks, high power consumption, and capacity limitations, with the global HBM market expected to grow from $17 billion in 2024 to $98 billion by 2030, representing a CAGR of 33% [1] - The 3DDRAM technology, which utilizes a vertical architecture to break through traditional process limits, is anticipated to be a long-term solution, with key manufacturers like SK Hynix and Samsung planning to launch HBM4 products by 2025 and 2026 respectively [1][2] - The shift towards 3DDRAM is expected to benefit high aspect ratio etching and thin film deposition processes, as the industry value is moving from lithography equipment to etching and deposition segments [2] Group 2 - The W2W (Wafer-to-Wafer) bonding process is crucial for 3DDRAM, with the bonder market projected to grow from 100 billion yen in 2025 to 300 billion yen by 2030, driven by the need to stack control circuits vertically [3] - Chinese manufacturers may achieve a competitive advantage in the 3DDRAM era due to limited reliance on EUV (Extreme Ultraviolet) lithography, focusing instead on etching, thin film, and bonding technologies [4] - Customized storage solutions are becoming increasingly important for edge AI applications, with companies like Winbond and Nanya targeting specific markets such as AI servers and AI-enabled devices, indicating a positive outlook for domestic manufacturers [5][6]