晶盛机电首条12英寸碳化硅衬底加工中试线正式通线 彻底突破关键装备“卡脖子”风险

Core Insights - The official announcement from Jing Sheng Mechanical Electric indicates the successful commissioning of the first 12-inch silicon carbide (SiC) substrate processing pilot line, marking a significant advancement in the company's capabilities and positioning in the global SiC substrate technology landscape [1][2] Company Developments - The establishment of the 12-inch SiC pilot line represents a major achievement in the company's dual-engine development strategy of "advanced materials and advanced equipment," showcasing China's high-end semiconductor equipment manufacturing capabilities [2] - The company has successfully developed a 12-inch conductive silicon carbide crystal through innovative designs in crystal growth temperature fields and gas-phase raw material distribution processes, overcoming critical challenges such as uneven temperature fields and crystal cracking [2] - The company is actively expanding its silicon carbide production capacity, with a project in Shangyu aimed at producing 300,000 pieces of silicon carbide substrates annually, and another project in Penang, Malaysia, for 8-inch silicon carbide substrate industrialization [2][3] Industry Context - SiC is recognized as a core representative of third-generation semiconductor materials, with applications in key industries such as electric vehicles, smart grids, and 5G communications, as well as emerging fields like AR devices and advanced packaging [1] - The production of 12-inch substrates is expected to significantly reduce unit costs in downstream applications, with a 2.5 times increase in chip output compared to 8-inch products, thus providing a new benchmark for cost and efficiency in the industry [1] - The Chinese silicon carbide power module market is projected to reach $4.08 billion by 2031, with a compound annual growth rate (CAGR) of 20.0% in the coming years, indicating strong growth potential for the industry [3]