晶盛机电(300316)：首条12英寸碳化硅衬底加工中试线正式通线 SIC衬底应用打开公司成长空间

Group 1 - The semiconductor revenue share is continuously increasing, with rapid growth in orders. The first 12-inch silicon carbide (SiC) substrate pilot line has been successfully commissioned, marking a significant advancement in domestic technology and production capabilities [1] - SiC's high thermal conductivity and processing window are expected to significantly enhance the cooling of CoWoS structures while reducing package size. SiC serves as an ideal material for high-performance CoWoS interlayers due to its thermal conductivity of 490 W/m·K, which is 2-3 times higher than that of silicon [2] - SiC's high refractive index and thermal conductivity make it an ideal substrate material for AR glasses. A single-layer SiC lens can achieve a field of view (FOV) of over 80 degrees, providing a thinner design and clearer visual effects [3] Group 2 - SiC's high hardness and thermal stability support the introduction of etching processes, effectively improving production capacity and yield. The company is actively expanding its 6 and 8-inch substrate capacity and has achieved breakthroughs in 12-inch SiC crystal growth technology [4] - The company maintains its profit forecast for 2025-2027, estimating net profits of 1 billion, 1.2 billion, and 1.5 billion yuan, corresponding to current P/E ratios of 58, 47, and 38 times, respectively, and maintains a "buy" rating [4]