铁磁性和反铁磁性共存 原子级厚度二维材料可大幅降低存储器能耗

Core Insights - Researchers at Chalmers University of Technology in Sweden have made a breakthrough in developing a new type of layered magnetic material that allows ferromagnetism and antiferromagnetism to coexist within a single atomic-thin two-dimensional structure, reducing memory energy consumption to about one-tenth of its previous levels [1][2] Group 1: Material Development - The new material is an alloy composed of magnetic and non-magnetic elements such as cobalt, iron, germanium, and tellurium, enabling the coexistence of ferromagnetic and antiferromagnetic properties in a single structure [2] - The two-dimensional crystal films in the memory are stacked through van der Waals forces rather than traditional chemical bonds, which avoids interface issues found in multilayer structures, enhancing manufacturing reliability and simplifying production processes [2] Group 2: Implications for Technology - This discovery could lead to a new generation of ultra-efficient and reliable storage solutions for artificial intelligence, mobile technology, and advanced data processing, addressing the exponential growth of digital data [1] - As digital data volume is expected to account for nearly 30% of global energy consumption in the coming decades, the need for energy-efficient storage technologies is becoming increasingly critical [1]