我国科学家实现全球首颗二维-硅基混合架构芯片 产业落地还有多久

Core Viewpoint - Fudan University has achieved a significant breakthrough in the development of a full-featured 2D silicon-based hybrid flash chip, addressing key engineering challenges in new 2D information devices [1][3][4] Group 1: Research Progress - The research team has made multiple advancements in 2D flash memory devices since 2018, culminating in the "Dawn" prototype that achieved a speed of 400 picoseconds for non-volatile storage, marking it as the fastest semiconductor charge storage technology to date [2][3] - The current research is focused on overcoming the engineering challenges to transition 2D flash memory from prototype to industrial application, with a goal to integrate it into existing CMOS technology [4][5] Group 2: Industrialization Challenges - The transition from laboratory to factory (LAB to FAB) is a significant concern, as the team aims to accelerate the industrialization process of 2D electronic devices, particularly in the memory sector, which is seen as the most likely candidate for early commercialization [4][7] - The team is developing an "Atomic Device to Chip" (ATOM2CHIP) integration framework to facilitate the integration of atomic-level devices into functional chips, which is a milestone for the engineering application of 2D materials [7][8] Group 3: Future Plans - The research team plans to establish an experimental base and collaborate with relevant institutions to lead engineering projects, aiming to achieve a chip capacity of one million (Mb) within the next 3 to 5 years [8][9] - Once the capacity reaches the million level, the team intends to hand over the project to the industry for large-scale production of commercial products [8]