复旦研发二维—硅基混合架构闪存芯片

Core Insights - Fudan University has achieved a milestone in the engineering of two-dimensional (2D) electronic devices by developing the world's first 2D-silicon hybrid architecture chip, integrating the "Dawn (PoX)" ultra-fast flash memory device with mature silicon-based CMOS technology [2][3] - The research results were published in "Nature" on October 8, highlighting the importance of integrating 2D ultra-fast memory devices into traditional semiconductor production lines to accelerate the incubation of new technologies [2] Group 1 - The CMOS (Complementary Metal-Oxide-Semiconductor) technology is the mainstream process for integrated circuit manufacturing, with most chips in the market being produced using this technology [2] - The challenge lies in integrating 2D materials with CMOS without compromising performance, as the surface of CMOS circuits is uneven while 2D materials are atomically thin [3] - The team innovated a core process that achieves tight integration of 2D materials and CMOS substrates at the atomic scale, resulting in a chip yield exceeding 94% [3] Group 2 - The newly developed chip has successfully completed the tape-out process, and the team plans to establish an experimental base and collaborate with relevant institutions to create self-led engineering projects [4] - Industry representatives believe that the 2D devices developed by the team possess inherent speed advantages, potentially breaking the balance of speed, power consumption, and integration in flash memory, which may lead to greater market opportunities in 3D applications in the future [4]