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Industry Overview - The silicon carbide (SiC) market is rapidly expanding due to growth in sectors such as electric vehicles, photovoltaic energy storage, data centers, and AR glasses. The global sales of SiC power semiconductor devices are projected to reach $2.6 billion in 2024, with a compound annual growth rate (CAGR) of 45.4% from 2020 to 2024. By 2029, the market size is expected to grow to $13.6 billion, increasing the penetration rate from 4.9% in 2024 to 17.1% in 2029 [1][4]. Company Performance - Hantian Technology (Xiamen) Co., Ltd. is a leading player in the global SiC epitaxy industry, holding a significant market share of 31.6% in sales and 29.2% in revenue in 2024. The company has established itself as a pioneer in the commercialization of various sizes of SiC epitaxial wafers [6][7]. - The company's revenue has shown volatility, with total revenues of 441 million yuan in 2022, 1.143 billion yuan in 2023, and a decline to 974 million yuan in 2024. The revenue from epitaxial wafer sales has consistently increased, accounting for 86.4% of total revenue in 2024 [7][10]. Market Dynamics - The SiC epitaxial wafer market is expected to grow from $1.2 billion in 2024 to $5.8 billion by 2029, with a CAGR of 38.2%. The quality of SiC epitaxial wafers is crucial, as they represent about 25% of the value chain of SiC power devices [4]. - The average price of 6-inch SiC epitaxial wafers has been declining, projected to drop from 7,300 yuan in 2024 to 4,400 yuan by 2029, indicating a potential decrease of nearly 40% [11]. Strategic Initiatives - Hantian Technology is focusing on technological innovation and scaling up production to maintain its competitive edge. The company has successfully developed 8-inch SiC epitaxial wafer technology and established partnerships with 18 companies for mass supply [12][13]. - The sales of 8-inch SiC epitaxial wafers are expected to increase significantly, from 285 units in 2023 to 7,466 units in 2024, with 2,914 units sold in the first five months of 2025, reflecting a substantial growth trajectory [13].