ROHM Develops Breakthrough Schottky Barrier Diode Combining Low VF and IR for Advanced Image Sensor Protection

ROHM's Innovative Schottky Barrier Diode Combines low VF with low IR which is ideal for protection applications. VF vs IR Characteristic Comparison Supports higher resolution image sensors. Santa Clara, CA and Kyoto, Japan, Oct. 23, 2025 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced the development of an innovative Schottky barrier diode that overcomes the traditional VF / IR trade-off, delivering high reliability protection for a wide range of high-resolution image sensor applications suc ...