芯片光刻取得新突破！

Core Insights - Recent advancements in photolithography technology have been achieved by a research team led by Professor Peng Hailin from Peking University, utilizing cryo-electron tomography to analyze the microscopic 3D structure and behavior of photoresist molecules in a liquid environment, which aids in developing industrial solutions to significantly reduce photolithography defects [1][2] Group 1: Photolithography Technology - Photolithography is a critical driver for the continuous miniaturization of integrated circuit chip manufacturing processes [1] - The core step of "development" in photolithography involves dissolving the exposed areas of photoresist with a developer solution to accurately transfer circuit patterns onto silicon wafers [1] - The microscopic behavior of photoresist in the developer solution has long been a "black box," limiting process optimization and becoming a key bottleneck for improving yield in advanced processes of 7nm and below [1] Group 2: Research Methodology - The research team introduced cryo-electron tomography into the semiconductor field, successfully synthesizing a high-resolution 3D "panoramic photo" with a resolution better than 5nm, overcoming traditional limitations of in-situ, three-dimensional, and high-resolution observation [1] - This technology provides a powerful tool for analyzing various liquid-phase interfacial reactions at the atomic/molecular scale, which can enhance defect control and yield improvement in critical processes such as photolithography, etching, and wet cleaning in advanced manufacturing [2]