科研人员研发“闪速退火”工艺 一秒“炼”就晶圆级高性能储能薄膜

Core Viewpoint - The research team from the Shenyang National Laboratory for Materials Science has developed a rapid annealing process capable of heating and cooling at a rate of 1000 degrees Celsius per second, leading to the creation of high-performance energy storage films, which opens new pathways for the manufacturing of next-generation energy storage capacitors [1][2]. Group 1: Technology Development - The newly developed "flash annealing" process allows for the preparation of a relaxor ferroelectric film made of lead zirconate on silicon wafers in just one second [1]. - This process effectively "freezes" the special structure of materials at high temperatures to room temperature, forming nano-microdomains less than 3 nanometers in size, which are crucial for inducing relaxor ferroelectric behavior and achieving high-efficiency energy storage [1]. Group 2: Performance and Applications - The capacitors manufactured using this process exhibit excellent environmental adaptability, showing minimal degradation in energy density and efficiency (less than 3%) after exposure to extreme temperatures ranging from -196 degrees Celsius to 400 degrees Celsius [2]. - The research team has successfully produced uniform high-performance films on 2-inch silicon wafers, providing an industrially viable solution for chip-level integrated energy storage [2].