新研发，“闪速退火”！

Core Viewpoint - Researchers have developed a "flash annealing" process that can achieve heating and cooling rates of up to 1000 degrees Celsius per second, successfully fabricating wafer-level high-performance energy storage films, paving the way for the next generation of high-performance energy storage capacitors [1][2]. Group 1: Technology Development - The "flash annealing" process allows for the preparation of a lead zirconate relaxor ferroelectric film on silicon wafers in just one second [2]. - This technology freezes the special structure of materials at high temperatures to room temperature, forming nano-microdomains less than 3 nanometers in size, which are crucial for inducing relaxor ferroelectric behavior and achieving high-efficiency energy storage [2]. Group 2: Performance and Applications - The films produced using this process exhibit excellent environmental adaptability, showing minimal degradation (less than 3%) in energy density and efficiency after exposure to extreme temperatures ranging from -196 degrees Celsius to 400 degrees Celsius [2]. - The capacitors can reliably operate in extreme conditions, such as in cold outer space or hot underground oil and gas exploration wells [2]. Group 3: Industrial Potential - Researchers have successfully fabricated uniform high-performance films on 2-inch silicon wafers, providing a solution with industrialization potential for chip-level integrated energy storage [2].