Ju Chao Zi Xun·2025-11-28 06:23Core Viewpoint - The successful launch of the SiC chip by Hunan Sanan Semiconductor marks a significant milestone in the collaboration between Sanan and Li Auto, indicating a new phase of deep and large-scale cooperation in the automotive semiconductor sector [1][2]. Group 1: Company Developments - Hunan Sanan Semiconductor held a ceremony for the launch of its automotive-grade silicon carbide (SiC) chips, which have gained recognition from top market clients for their performance, reliability, and mass delivery capabilities [1]. - The general manager of Hunan Sanan emphasized that the successful deployment of the SiC chips is a critical step from technological breakthroughs to market leadership, showcasing the advantages of their vertically integrated supply chain model [1]. - Hunan Sanan plans to continue advancing its development strategy centered on "automotive-grade, platform-based, high efficiency, and full-chain self-control" to provide leading power semiconductor solutions for industry leaders like Li Auto [2]. Group 2: Industry Collaboration - Li Auto's Vice President of Powertrain R&D praised the collaboration with Sanan as a key element in the forward-looking and in-depth layout of their core electric drive system supply chain [2]. - The technical exchange session highlighted discussions on enhancing electric drive system efficiency and optimizing charging performance through the use of SiC chips, with both parties recognizing the importance of Hunan Sanan's expertise in 8-inch substrate technology and low defect density processes [2]. - Hunan Sanan presented Li Auto with an 8-inch SiC MOSFET chip product as a symbol of their advanced technological capabilities, commemorating this milestone in their partnership [2]. Group 3: Future Outlook - Over the next three to five years, Sanan plans to increase R&D investment in automotive-grade SiC MOSFET and GaN manufacturing service platforms, aiming to accelerate the ramp-up of its 8-inch production line and improve yield rates [3].