Mitsubishi Electric to Launch Two New XB Series HVIGBT Modules

Core Insights - Mitsubishi Electric Corporation is set to launch new high-voltage insulated-gate bipolar transistor (HVIGBT) modules in its XB Series on December 9, featuring standard-isolation (6.0kVrms) and high-isolation (10.2kVrms) options for enhanced efficiency in inverter systems used in railcars and large industrial equipment [1][2] Group 1: Product Features - The new modules utilize Mitsubishi Electric's proprietary relaxed field of cathode (RFC) diode and carrier-stored trench-gate bipolar transistor (CSTBT) structure, resulting in a 30% reduction in chip termination region size and approximately 20 times greater moisture resistance compared to existing products [2] - The modules also achieve a 5% reduction in total switching loss compared to previous models, with a reverse-recovery safe-operating area (RRSOA) tolerance that is 2.5 times greater than earlier versions [2] Group 2: Environmental Impact - By improving the efficiency and reliability of inverters in large industrial equipment, particularly in variable outdoor environments, the new modules are expected to contribute to carbon neutrality efforts [3] Group 3: Exhibition and Marketing - Mitsubishi Electric plans to showcase the new modules at the 40th Nepcon Japan R&D and Manufacturing show in Tokyo from January 21 to 23, 2026, along with other exhibitions across North America, Europe, China, India, and additional locations [1]