Core Insights - Coherent Corp. has achieved a significant milestone with its next-generation 300mm silicon carbide (SiC) platform aimed at enhancing thermal efficiency in AI datacenter infrastructure [1][2] Group 1: Technology Development - The new 300mm SiC solution is designed to handle increasing thermal loads, addressing the performance and scalability requirements of modern datacenters [2] - Transitioning to larger diameter SiC wafers is expected to yield substantial improvements in energy efficiency and thermal performance, crucial for high power density and faster switching applications [2][4] Group 2: Applications and Innovations - While primarily focused on datacenter thermal management, Coherent is also advancing SiC technology for augmented reality (AR) and virtual reality (VR) devices, as well as power electronics [3][4] - The conductive SiC substrates offer low resistivity, low defect density, and high homogeneity, which enhance energy efficiency and thermal performance in next-generation datacenter systems [4] Group 3: Market Position - The 300mm platform strengthens Coherent's leadership in wide-bandgap semiconductor materials, facilitating innovation across various sectors including datacenters, optics, and power applications [5]
Coherent Expands Silicon Carbide Platform with 300mm Capability to Support Growing Demand of AI and Datacenters