ROHM Launches SiC MOSFETs in TOLL Package: Achieving Both Miniaturization and High-Power Capability

Core Insights - ROHM Semiconductor has commenced mass production of the SCT40xxDLL series of SiC MOSFETs in TOLL packages, which provide approximately 39% improved thermal performance compared to conventional packages [1][3] - The new products are designed to meet the increasing demand for higher power density in applications such as AI servers and compact PV inverters while maintaining a low profile [2][3] Product Features - The SCT40xxDLL series reduces component footprint by approximately 26% and achieves a low profile of 2.3mm thickness, which is about half that of conventional packaged products [3] - The series supports a drain-source rated voltage of up to 750V, allowing for lower gate resistance and increased safety margin for surge voltages, contributing to reduced switching losses [3] - The lineup consists of six models with on-resistance ranging from 13mΩ to 65mΩ, with mass production starting in September 2025 [4][8] Applications - The new SiC MOSFETs are suitable for various applications, including power supplies for AI servers, data centers, PV inverters, and energy storage systems (ESS) [5] - The products are also applicable in consumer equipment for general power supplies [5] Brand and Technology - ROHM's EcoSiC brand focuses on silicon carbide (SiC) devices, which are recognized for their superior performance compared to traditional silicon [5] - The company has developed essential technologies for SiC evolution, including wafer fabrication, production processes, packaging, and quality control methods, establishing itself as a leading SiC supplier [5]