Xin Lang Cai Jing·2025-12-07 15:04Core Insights - Ansemone has announced a collaboration with China's Innosec to accelerate the global deployment of Gallium Nitride (GaN) products, leveraging Innosec's large-scale manufacturing capabilities and Ansemone's packaging technology, with samples expected to be delivered to customers in the first half of 2026 [1][4][5] Group 1: Collaboration Details - The partnership will focus on wafer procurement and broader collaboration, exploring the use of Innosec's mature 8-inch GaN-on-silicon process to expand the production of GaN power components [1][4] - The collaboration aims to combine Ansemone's expertise in system integration, drivers, and packaging with Innosec's strengths in GaN wafers and large-scale manufacturing to accelerate the market introduction of cost-effective and energy-efficient solutions [1][4] Group 2: Market Potential - Ansemone anticipates that this collaboration will expand its low-voltage and medium-voltage (40V to 200V) GaN power component product portfolio and increase global production scale, targeting a market expected to reach $2.9 billion by 2030 across various sectors including industrial, automotive, telecommunications infrastructure, consumer electronics, and AI data centers [5][6] Group 3: GaN Technology Advantages - GaN technology offers higher switching speeds, smaller sizes, and lower energy losses, enabling greater power delivery in smaller spaces [2][5] - The collaboration aims to overcome previous limitations in product variety and capacity that restricted GaN's application in low-voltage and medium-voltage sectors, facilitating rapid global deployment of mainstream GaN solutions [5][6] Group 4: Innosec's Role - Innosec is a high-tech enterprise focused on the research and manufacturing of third-generation semiconductor GaN, possessing the world's largest GaN power semiconductor production base, with applications spanning consumer electronics, data centers, automotive electronics, renewable energy, and industrial sectors [3][6][7] - GaN is seen as a crucial upgrade from traditional silicon materials, addressing limitations in frequency, power, power consumption, thermal management, and device size, positioning it as a significant development direction for the future electronics industry [7]