国林科技：臭氧在ALD中作氧前驱体，与TMA等反应沉积单原子层氧化物薄膜

Core Viewpoint - Guolin Technology highlighted the fundamental differences between Atomic Layer Deposition (ALD) and Atomic Layer Etching (ALE), emphasizing their opposing functions and reliance on self-limiting cycles [2] Group 1 - In ALD, ozone acts as an oxygen precursor, reacting with TMA and depositing single atomic layer oxide films [2] - In ALE, ozone serves as an oxidizing agent, oxidizing the surface atoms of the substrate before etching them away to achieve single atomic layer removal [2]