平湖实验室成功研制新器件

Core Insights - The Shenzhen Pinghu Laboratory has made significant advancements in low-voltage (15V-40V) Gallium Nitride (GaN) power devices, successfully developing high-performance low-voltage GaN E-HEMT (Enhanced High Electron Mobility Transistor) devices that meet international advanced standards, providing a new solution for efficient, high-power density computing chip power supply [1] Group 1: Technological Advancements - The laboratory's research team has overcome several key technical challenges using an advanced 8-inch silicon-based GaN research and pilot platform [1] - The representative 25V device has achieved key parameters that significantly exceed the performance limits of traditional silicon-based technologies [1] Group 2: Industry Context - The rapid development of artificial intelligence has increased the demands on power supply systems for computing chips in terms of efficiency and power density [1] - Traditional silicon-based power devices are approaching their physical performance limits, while GaN devices are recognized as the core for next-generation efficient power conversion due to their high electron mobility and fast switching characteristics [1] - The cost and performance advantages of GaN devices in low-voltage applications have not yet fully materialized, posing a key bottleneck for large-scale applications [1]