晶盛机电12英寸单片式碳化硅外延生长设备交付

Core Viewpoint - The delivery of a 12-inch single-wafer silicon carbide (SiC) epitaxy growth equipment to the SiC wafer manufacturer Hantian Tiancheng marks a significant advancement in the SiC industry, enhancing production capabilities for both 8-inch and 12-inch substrates [1] Group 1 - The 12-inch single-wafer SiC epitaxy equipment has been successfully delivered to Hantian Tiancheng, a producer of SiC epitaxial wafers [1] - The 12-inch substrates used in this process are supplied by Zhejiang Jingrui SuperSiC, indicating collaboration within the supply chain [1] - The newly developed equipment is compatible with both 8-inch and 12-inch SiC epitaxy production, showcasing its versatility [1]