我国实现12英寸碳化硅外延晶片全球首发

Core Insights - The successful development of the world's first 300mm silicon carbide (SiC) epitaxial wafer in China marks a significant advancement for the third-generation semiconductor industry, laying a crucial foundation for large-scale and low-cost applications [1][2] - Silicon carbide, as a core material for third-generation semiconductors, offers significant advantages over traditional silicon materials in terms of high voltage, high temperature, and high frequency performance [1] Group 1 - The 12-inch SiC epitaxial wafer developed by Hantian Technology (Xiamen) Co., Ltd. can accommodate 4.4 times the number of chips compared to 6-inch products and 2.3 times compared to 8-inch products, which will lower manufacturing costs for downstream power devices [1] - The successful development is attributed to the localization of the supply chain, with core production equipment and substrate materials provided by domestic companies [1] - The product exhibits excellent performance metrics, with a layer thickness non-uniformity of less than 3%, a doping concentration non-uniformity controlled within 8%, and a chip yield exceeding 96%, meeting the reliability requirements for power device applications [1] Group 2 - Hantian Technology is the first company in China to achieve commercial supply of 3-inch, 4-inch, and 6-inch SiC epitaxial wafers, and the breakthrough in 12-inch technology demonstrates China's technological leadership in this field [2] - This advancement provides a strong material foundation for building a self-controlled third-generation semiconductor ecosystem and seizing future competitive advantages in the industry [2] - Preparations for mass supply of the 12-inch SiC epitaxial wafers have already commenced [2]