晶盛机电与瀚天天成携手推动碳化硅技术新突破

Core Viewpoint - The successful delivery of the world's first 12-inch single-wafer silicon carbide (SiC) epitaxy equipment by Jing Sheng Electromechanical marks a significant breakthrough in SiC epitaxy technology, enhancing production efficiency and reliability in the industry [1] Group 1: Company Developments - Jing Sheng Electromechanical delivered the first 12-inch single-wafer SiC epitaxy equipment to leading industry player Hantian Tiancheng on December 24, 2025 [1] - The new equipment features a unique vertical airflow intake design, improving precise temperature control and gas distribution during the epitaxy process [1] - The equipment includes automated loading/unloading modules and one-click automatic PM assistance, significantly enhancing particle control and maintenance efficiency [1] Group 2: Industry Impact - Hantian Tiancheng has launched the world's first 12-inch high-quality SiC epitaxy wafer, which improves production efficiency for downstream power devices and reduces unit manufacturing costs for SiC chips [1] - The introduction of 12-inch wafers allows for a significant increase in the number of chips per wafer, with 12-inch wafers accommodating 4.4 times the number of chips compared to 6-inch wafers and 2.3 times compared to 8-inch wafers under the same production process [1]