英特尔申请用于具有凸块间距缩放的过孔形成的具有保护层的嵌入式桥专利，过孔接触焊盘

Group 1 - The core point of the article is that Intel has applied for a patent for a device involving a protective layer and embedded bridge with bump pitch scaling, indicating ongoing innovation in semiconductor technology [1] Group 2 - The patent application is titled "Embedded Bridge with Protective Layer for Via Formation with Bump Pitch Scaling" and was published under the number CN121215621A [1] - The application date for the patent is May 2025, suggesting future developments in Intel's technology roadmap [1] - The patent abstract describes a device that includes a substrate and components within the substrate, which feature pads, indicating a focus on advanced manufacturing techniques [1]