比亚迪申请单光子雪崩二极管及其制备方法专利,有利于改善时间抖动特性
Jin Rong Jie·2026-01-01 00:44

Group 1 - BYD Company Limited has applied for a patent titled "Single Photon Avalanche Diode and Its Preparation Method, Array, and Image Sensor," with publication number CN121240561A, filed on August 2025 [1] - The patent application reveals a single photon avalanche diode design that includes an epitaxial layer with a first conductive type and a second conductive type contact region, aimed at improving photon detection efficiency and time jitter characteristics [1] - The structure of the diode includes a multiplication junction and a well region, which enhances the depletion region and optimizes performance [1] Group 2 - BYD Company Limited, established in 1995 and located in Shenzhen, primarily engages in the automotive manufacturing industry, with a registered capital of approximately 9117.20 million RMB [2] - The company has invested in 108 enterprises, participated in 1010 bidding projects, and holds 5000 patents along with 1820 trademark registrations [2] - BYD Semiconductor Co., Ltd., founded in 2004, focuses on research and development, with a registered capital of approximately 456.22 million RMB, and has invested in 9 enterprises and participated in 511 bidding projects [2]

BYD-比亚迪申请单光子雪崩二极管及其制备方法专利,有利于改善时间抖动特性 - Reportify