中国半导体持续突围，全球首款12英寸碳化硅外延晶片来了！

Core Viewpoint - The launch of the world's first 12-inch silicon carbide (SiC) epitaxial wafer by a Chinese company marks a significant breakthrough in the third-generation semiconductor sector, enhancing China's chip manufacturing capabilities [1][5]. Group 1: Technology and Performance - Silicon carbide is a core material for third-generation semiconductors, offering superior performance compared to traditional silicon, such as higher voltage tolerance, temperature resistance, and reduced size and energy consumption [3]. - The new 12-inch wafer can accommodate 4.4 times the number of chips compared to a 6-inch wafer and 2.3 times compared to an 8-inch wafer, leading to a potential cost reduction of at least 30% for downstream power device manufacturers [3][5]. Group 2: Production and Supply Chain - The breakthrough is not just a laboratory sample but a technology ready for mass production, with a uniformity of epitaxial layer thickness below 3% and a chip yield exceeding 96%, indicating maturity for large-scale commercialization [5]. - The entire production process, including core equipment and substrate materials, is provided by domestic companies, achieving full supply chain localization and reducing dependency on imports [5][8]. Group 3: Market Impact and Future Prospects - The company, Hantian Cheng, has become the largest supplier of silicon carbide epitaxial wafers globally in 2023, with a projected market share of over 31% in 2024, showcasing a decade of technological accumulation [7]. - The introduction of the 12-inch SiC wafer positions China to lead in the next generation of semiconductor technology, crucial for industries such as electric vehicles, photovoltaic power, and smart grids, which require efficient and stable materials [7][8].