Mitsubishi Electric to Ship Samples of Four New Trench SiC-MOSFET Bare Dies for Power Semiconductors

Core Viewpoint - Mitsubishi Electric Corporation is launching new trench silicon carbide metal-oxide-semiconductor field-effect transistor (SiC-MOSFET) bare dies aimed at enhancing power electronics equipment efficiency, particularly for electric vehicles and renewable energy systems [1][3]. Group 1: Product Launch - Starting January 21, Mitsubishi Electric will ship samples of four new SiC-MOSFET bare dies designed for power electronics applications [1]. - These bare dies are intended for use in electric vehicle traction inverters, onboard chargers, and renewable energy power supply systems [1]. Group 2: Market Trends - The market for power electronics equipment is projected to grow due to global decarbonization efforts [3]. - There is an increasing demand for power semiconductors with efficient bare dies that reduce power consumption while ensuring high performance [3]. Group 3: Exhibitions - Mitsubishi Electric will showcase the new SiC-MOSFET bare dies at the 40th Nepcon Japan R&D and Manufacturing show in Tokyo from January 21 to 23, along with other exhibitions in North America, Europe, China, and India [2].