打破20年技术僵局 西电团队攻克芯片散热世界难题

Core Viewpoint - The research team at Xi'an University of Electronic Science and Technology has achieved a significant breakthrough in semiconductor materials, transforming the "island-like" connections between materials into atomically flat "films," which greatly enhances chip heat dissipation efficiency and overall performance [1][3]. Group 1: Research Breakthrough - The team developed a novel "ion implantation-induced nucleation" technology that changes the growth mode of aluminum nitride layers from random and uneven to precise and uniform [2][3]. - This innovation reduces interface defects and thermal resistance, with the new structure's thermal resistance being only one-third of that of the traditional "island-like" structure [3]. Group 2: Performance Improvement - The newly developed aluminum nitride film technology enabled the fabrication of gallium nitride microwave power devices that achieved output power densities of 42 W/mm and 20 W/mm in the X-band and Ka-band, respectively, marking a 30% to 40% improvement over international performance records [3]. - This advancement allows for increased detection ranges in chip applications and improved signal coverage with lower energy consumption for communication base stations [3]. Group 3: Broader Implications - The research successfully transforms aluminum nitride from a specific "adhesive" to a versatile "universal integration platform," providing a replicable model for high-quality integration of various semiconductor materials [4]. - The ongoing exploration of material limits could potentially lead to a tenfold increase in device power handling capabilities if diamond layers are used in the future [5].