性能突破性提升！我国攻克半导体材料世界难题

Core Viewpoint - The research team from Xi'an University of Electronic Science and Technology has developed a breakthrough technology that transforms rough "island" interfaces in chip manufacturing into atomically smooth "films," significantly enhancing heat dissipation efficiency and device performance [1][3]. Group 1: Technological Breakthrough - The traditional semiconductor chip's crystal nucleation layer has uneven surfaces, which severely affects heat dissipation [3]. - The newly developed "ion implantation induced nucleation" technology allows for precise and controllable uniform growth, addressing a long-standing issue in the industry since the related nucleation technology won the Nobel Prize in 2014 [3]. - The new structural interface exhibits thermal resistance that is only one-third of that of traditional methods [3]. Group 2: Performance Improvements - Gallium nitride microwave power devices produced using this technology achieve output power densities of 42 watts/mm in the X-band and 20 watts/mm in the Ka-band, improving international records by 30% to 40% [3]. - This advancement implies that the same chip area can significantly increase detection range, allowing communication base stations to cover greater distances while being more energy-efficient [3].